Modification of spintronic terahertz emitter performance through defect engineering

Spintronic ferromagnetic/non-magnetic heterostructures are novel sources for the generation of THz radiation based on spin-to-charge conversion in the layers. The key technological and scientific challenge of THz spintronic emitters is to increase their intensity and frequency bandwidth. Our work reveals the factors to engineer spintronic Terahertz generation by introducing the scattering lifetime and the interface transmission for spin polarized, non-equilibrium electrons. We clarify the influence of the electron-defect scattering lifetime on the spectral shape and the interface transmission on the THz amplitude, and how this is linked to structural defects of bilayer emitters. The results of our study define a roadmap of the properties of emitted as well as detected THz-pulse shapes and spectra that is essential for future applications of metallic spintronic THz emitters.Comment: 33 pages, 13 figure

Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defects

Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative Auger recombination. In addition, the holes should allow for a non-transient electrical current. However, on the bottom end of the nanoscale, both substitutional incorporation and ionization are subject to significant increase in their respective energies due to confinement and size effects. Nevertheless, successful B-doping of Si nanocrystals was reported for certain structural conditions. Here, we investigate B-doping for small, well-dispersed Si nanocrystals with low and moderate B-concentrations. While small amounts of B-atoms are incorporated into these nanocrystals, they hardly affect their optical or electrical properties. If the B-concentration exceeds ~1 at%, the luminescence quantum yield is significantly quenched, whereas electrical measurements do not reveal free carriers. This observation suggests a photoluminescence quenching mechanism based on B-induced defect states. By means of density functional theory calculations, we prove that B creates multiple states in the bandgap of Si and SiO2. We conclude that non-percolated ultra-small Si nanocrystals cannot be efficiently B-doped

Physical aspects of matrix isolation technique: FTIR studies on CO and CO₂ in O₂ and N₂ matrices

The matrix isolation technique is traditionally used to investigate the properties of the matrix-isolated species themselves or to solve some special questions of the theory of defects in solid. We showed here that the optical spectroscopy of really matrix-isolated molecules can be successfully used to investigate the host crystal qualities too. We demonstrated the capacity of modern FTIR spectroscopy to study the properties of cryocrystals such as phase transitions, solubility boundaries, orientational order parameter, etc. by monitoring the behavior of the IR-active molecules, which are present in matrices under investigation as a natural contamination (40 ppb). Due to the excellent optical quality of our crystal samples, we were able to determine a part of the binary phase diagram CO-O₂ (at CO concentrations less than 1 ppm) as well as to investigate the kinetics of phase transitions. Furthermore, we successfully used the spectroscopy of the matrix-isolated molecules to proof that the α-β phase transition of the matrix crystal (O₂) is of first order

Chemical and structural characterisation of DGEBA-based epoxies by time of flight secondary ion mass spectrometry (ToF-SIMS) as a preliminary to polymer interphase characterisation

Time-of-flight secondary ion mass spectrometry (ToF-SIMS) has become a powerful tool in the field of surface analysis since it provides information about the top few monolayers of a sample, i.e. on the chemical composition of the sample surface. Thus, the general question arises whether a surface-sensitive technique like ToF-SIMS would be appropriate to detect systematic chemical and/or structural changes in organic bulk polymers caused by varying a chemical content of the initial components or by tracking, e.g. curing processes in such materials. It is shown that careful sample preparation and the use of multivariate methods permit the quantitative acquisition of chemical and structural information about bulk polymers from the secondary ion signals. The hardener concentration and a cross-linking coefficient in diglycidyl ether of bisphenol A based epoxies were determined by ToF-SIMS measurements on samples with different resin to hardener ratio and varying curing time. In future work, we will use the developed method to investigate the local composition of adhesively bonded joints. In particular, the mapping of the chemical and structural properties in the so-called interphase will then be of interest

Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defects

Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative Auger recombination. In addition, the holes should allow for a non-transient electrical current. However, on the bottom end of the nanoscale, both substitutional incorporation and ionization are subject to significant increase in their respective energies due to confinement and size effects. Nevertheless, successful B-doping of Si nanocrystals was reported for certain structural conditions. Here, we investigate B-doping for small, well-dispersed Si nanocrystals with low and moderate B-concentrations. While small amounts of B-atoms are incorporated into these nanocrystals, they hardly affect their optical or electrical properties. If the B-concentration exceeds ~1 at%, the luminescence quantum yield is significantly quenched, whereas electrical measurements do not reveal free carriers. This observation suggests a photoluminescence quenching mechanism based on B-induced defect states. By means of density functional theory calculations, we prove that B creates multiple states in the bandgap of Si and SiO2. We conclude that non-percolated ultra-small Si nanocrystals cannot be efficiently B-doped

Facile Synthesis of Monodisperse Maghemite and Ferrite Nanocrystals from Metal Powder and Octanoic Acid

Extremely small, monodisperse, and spheric maghemite (γ-Fe₂O₃, 2–3 nm) and manganese (4–7 nm), cobalt (3–5 nm), and zinc ferrite (5–7 nm) nanocrystals are directly accessible on a large scale starting from inexpensive metal powders and octanoic acid by thermolysis in a high-boiling solvent. Bigger particle size is obtainable by prolonged reaction time according to the Ostwald ripening principle. The superparamagnetic nanocrystals and their assembly have been characterized by transmission electron microscopy, powder X-ray diffraction, Mössbauer spectroscopy, magnetic measurements, and energy-dispersive X-ray spectroscopy